Foundry
Planar 1µm shuttle — quick-turn
Low-volume planar CMOS with optional bipolar/MEMS options. Configure wafers and process stack to get a quick estimate.
Capabilities (1µm+ planar)
- Min feature size: 1.0 µm (drawn)
- Metal: 2 layers (Al), top thick option
- Gate oxide: 25–40 nm (thick I/O option)
- Device types: CMOS, analog I/O, optional NPN
- Channel resistance targets: < 150 Ω/□ poly; < 25 Ω/□ metal
- Thermal budget: up to 1050°C, 3 anneal cycles
- Wafer size: 200 mm; dicing available (known-good-die)
- Passivation: SiN with pad openings; ESD diodes on request
Order parameters
Process summary
- Min feature: 1.0 µm
- Metal layers: 2
- Gate oxide: 35 nm
- Anneal cycles: 2
- Device mix: CMOS
Estimate
$24000
For 2 wafers · standard turnaround
Packaging: Whole wafer
Notes
- Rush adds premium and pulls TAT to 4–5 weeks.
- NPN/MEMS variants add extra mask steps.
- Dicing/QFN is pilot-scale; expect limited yield tuning.